- The SRS Detection Set consisting of a unique sensor and lock-in amplifier combination has been developed specifically for demanding SRS imaging applications
- Very short integration times down to 100 ns are ideally suited for fast and accurate video rate imaging
- It works together with APE’s picoEmerald SRS light source as well as home-built and third-party SRS setups
The APE SRS Detection Set is a dedicated detector – amplifier combination and was designed specifically for applications that require a very short integration time, yet high sensitivity, such as in Stimulated Raman Scattering (SRS) Microscopy. This combination makes it an ideal tool for video rate imaging applications. It has successfully been used with the picoEmerald™ S to demonstrate low noise video rate SRS.
The integration time of the amplifier can be set to different values between 100 ns and 20 µs. Increasing the integration time leads to an improved signal to noise ratio.
The integrated silicon-based photodiode has a spectral response between 340 … 1100 nm making the SRS Detection Set suitable for use with optical parametric oscillators as well as Ti:Sa lasers. The SRS Detection Set has an integrated protection system that issues a warning when the applied power level is too high and could potentially damage the photodiode.
The SRS Detection Set is controlled via computer through a RS-232 interface and the included PC Software allows to save settings for time constant, phase etc.; hence once the settings are optimized the amplifier can be setup for usage within seconds.
For applications that require a higher sensitivity, for example SRGOLD the SRS Detection Set is available with a special 1064 nm enhanced detector.
|Frequency||8 MHz … 20 MHz|
|Amplification||0 dB … 58 dB|
|Typical Sensitivity||Δ I/I = 5 x 10-7 for 20 µs integration time (at 50 mW / 800 nm shot noise limited laser radiation)|
|Time constants||100 ns; 300 ns; 2 µs; 10 µs; 20 µs|
|Synchronization signal||100 mV … 1 V @ 50 Ω|
|Phase||0 … 360° in steps of 10°|
|Detection Sensor||Silicon photodiode; 10 x 10 mm active area
340 … 1100 nm spectral response
|Maximum laser power||50 mW @ 800 nm (unfocused)|
|Output offset setting||– 150 mV …150 mV; setting accuracy 1 mV|
- Enhanced detector for 1064 nm applications